Fotorezistori în baza nanocompozitului obținut prin oxidarea cristalelor de GaSe ca detectori de oxid atmosferic
DOI:
https://doi.org/10.52673/18570461.24.1-72.01Cuvinte cheie:
fotosensibilitate, fotorezistor, monocristale, oxid de galiu β-Ga2O3, plăci de GaSe, nanostructuriRezumat
Prin tratamentul termic în aer la temperatura de 900 °C al plăcilor de GaSe cu durata de 30 min s-a obținut un material nanocompozit din cristalite de Ga2Se3 și β-Ga2O3 fotosensibil în intervalul lungimilor de undă de la 500 nm până la 600 nm al spectrului. La majorarea duratei tratamentului termic până la 6 ore are loc oxidarea completă a plăcilorde GaSe cu formarea stratului de β-Ga2O3 cu lărgime a benzi interzise de 4,60 eV și fotosensibilitate în regiunea ultravioletă (UV-C). Benzile de fotosensibilitate ale fotorezistorilor pe baza compozitului Ga2Se3/Ga2O3 și ale oxidului nanostructurat β-Ga2O3 se încadrează în banda de absorbție din regiunea verde-roșu și respectiv UV-C, iar fotorezistorii respectivi pot servi ca detectori de ozon în aer.
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